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Same model may have multiple batches, images only for reference.
UPA2802T1L-E2-AY Real Image
Same model may have multiple batches, images only for reference.

UPA2802T1L-E2-AY

Part No UPA2802T1L-E2-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 18A 8DFN
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Renesas Electronics America
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 18A (Ta)
Rds On (Max) @ Id, Vgs 5.8mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 10 V
Mounting Type Surface Mount
Supplier Device Package 8-DFN3333 (3.3x3.3)
Package / Case 8-VDFN Exposed Pad
Standard Package 3,000 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 735581-UPA2802T1L-E2-AY
Ultra Librarian 3D Model Ultra Librarian UPA2802T1L-E2-AY CAD Model

Description

The Renesas Electronics America UPA2802T1L-E2-AY is a single N-Channel MOSFET transistor.

  • Manufacturer: Renesas Electronics America
  • Discrete Semiconductor: Products Transistor
  • Package Quantity: 3,000
  • Drain to Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id): 18A @ 25°C
  • Maximum On-State Resistance (Rds On): 5.8mOhm @ 18A and 10V
  • Mounting Type: Surface Mount
  • Package/Case: 8-VDFN Exposed Pad
  • Gate Charge (Qg): 16nC @ 5V
  • Input Capacitance (Ciss): 1800pF @ 10V
  • Product Status: Obsolete

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Pricing & Ordering

Quantity Unit Price Ext. Price
30+ $1.9589 $58.7670
75+ $1.6078 $120.5850
115+ $1.5569 $179.0435
155+ $1.5073 $233.6315
200+ $1.4565 $291.3000
270+ $1.3063 $352.7010
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 287 pieces
MOQ: 30 pcs
Order Increment : 1 pcs
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