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Same model may have multiple batches, images only for reference.
UPA2803T1L-E2-AY Real Image
Same model may have multiple batches, images only for reference.

UPA2803T1L-E2-AY

Part No UPA2803T1L-E2-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 20A 8DFN
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Renesas Electronics America
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta)
Rds On (Max) @ Id, Vgs 5.8mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds 2450 pF @ 10 V
Mounting Type Surface Mount
Supplier Device Package 8-DFN3333 (3.3x3.3)
Package / Case 8-VDFN Exposed Pad
Standard Package 3,000 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 389492-UPA2803T1L-E2-AY
Ultra Librarian 3D Model Ultra Librarian UPA2803T1L-E2-AY CAD Model

Description

The UPA2803T1L-E2-AY is a N-Channel MOSFET transistor designed for use in discrete semiconductor products.

  • Drain to Source Voltage (Vdss): 20 V
  • Continuous Drain Current (Id) @ 25°C: 20A
  • Rds On (Max): 5.8mOhm @ 20A and 4.5V
  • Gate Charge (Qg): 20 nC @ 4V
  • Input Capacitance (Ciss): 2450 pF @ 10V
  • Description: This MOSFET transistor is surface mountable and comes in an 8-VDFN exposed pad package. It is manufactured by Renesas Electronics America and is currently obsolete.

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110+ $1.5997 $175.9670
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195+ $1.4969 $291.8955
260+ $1.3421 $348.9460
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Availability: 12,000 pieces
MOQ: 30 pcs
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