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UPA2810T1L-E1-AY

Part No UPA2810T1L-E1-AY
Manufacturer Renesas Electronics America
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 13A 8DFN / P-Channel 30 V 13A (Ta) 1.5W (Ta) Surface Mount 8-DFN3333 (3.3x3.3)
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Renesas Electronics America
Package Bulk
Product Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 13A (Ta)
Rds On (Max) @ Id, Vgs 12mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 1860 pF @ 10 V
Power Dissipation (Max) 1.5W (Ta)
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-DFN3333 (3.3x3.3)
Package / Case 8-VDFN Exposed Pad
Standard Package 3,000 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 902101-UPA2810T1L-E1-AY
Ultra Librarian 3D Model Ultra Librarian UPA2810T1L-E1-AY CAD Model

Description

The UPA2810T1L-E1-AY is a P-Channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) used in discrete semiconductor products.

  • Category: Transistors - FETs, MOSFETs
  • Drain to Source Voltage Rating: 30 V
  • Continuous Drain Current: 13A @ 25°C
  • Rds On (Max): 12mOhm @ 13A and 10V
  • Mounting Type: surface mountable
  • Package: 8-VDFN exposed pad
  • Gate Charge: 40 nC @ 10V
  • Operating Temperature Range: -40°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $13.4719 $67.3595
11+ $11.0534 $121.5874
17+ $10.7080 $182.0360
23+ $10.3627 $238.3421
29+ $10.0173 $290.5017
39+ $8.9813 $350.2707
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,910 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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