The 2SB1065 is a PNP Epitaxial Planar Transistor manufactured by Rohm Semiconductor. It's designed for medium power switching and amplifier applications. It features a low saturation voltage and high collector current capability. The 2SB1065 is typically available in a TO-220 package for efficient heat dissipation.

Applications

• Switching Regulators
• DC-DC Converters
• Power Amplifiers
• Motor Drivers

Features

• PNP Epitaxial Planar Transistor
• Low Saturation Voltage
• High Collector Current
• High hFE (DC Current Gain)
• Fast Switching Speed

Benefits

• Improved efficiency in switching applications due to low saturation voltage.
• High current handling capability enables control of significant loads.
• Simplified circuit design with high DC current gain.
• Effective switching in high-frequency circuits.
• Reliable performance in demanding power applications.

Additional Details

The 2SB1065 has a collector-emitter voltage (VCEO) rating of -80V and a collector current (IC) rating of -7A. Its base-emitter voltage (VEBO) is -5V. The maximum power dissipation (PC) is 50W. The DC current gain (hFE) typically ranges from 80 to 240. The saturation voltage (VCE(sat)) is typically -0.5V at IC = -3A. This transistor is a versatile component for a range of power management and amplification tasks.