The 2SC2808 is an NPN silicon epitaxial planar transistor manufactured by Rohm Semiconductor. It is designed for use in high-frequency amplifier applications. This transistor features a high transition frequency and low feedback capacitance, making it suitable for oscillator, mixer, and IF amplifier stages.

Applications

• Oscillator circuits in communication equipment
• Mixer stages in frequency converters
• IF amplifiers in radio and television receivers
• RF front-end amplifiers
• High-frequency amplifier stages

Features

• High transition frequency: Enables operation at high frequencies.
• Low feedback capacitance: Improves stability in high-frequency circuits.
• High power gain: Provides significant signal amplification.
• Small signal amplifier: Designed for amplifying weak signals.
• Surface-mount package: Suitable for automated assembly and compact designs.

Benefits

• Stable high-frequency performance: Low feedback capacitance ensures stable operation.
• Enhanced signal amplification: High gain provides efficient signal amplification.
• Reliable operation: Robust design ensures consistent functionality.
• Simplified circuit design: Easy to integrate into existing and new designs.
• Compact size: Surface-mount package allows for smaller PCB layouts.

Technical Specifications

While specific specifications such as Transition Frequency (fT) and Collector-Base Capacitance (Cob) may vary, typical values for similar transistors from Rohm Semiconductor include:

• VCEO (Collector-Emitter Voltage): 20V (example)
• IC (Collector Current): 50mA (example)
• fT (Transition Frequency): 7 GHz (example)
• Cob (Collector-Base Capacitance): 0.6 pF (example)
• Package: SOT-23 (example)

Refer to the Rohm Semiconductor datasheet for the precise specifications of the 2SC2808 to ensure suitability for your specific application. Datasheets will provide detailed information on absolute maximum ratings, electrical characteristics, and high-frequency performance parameters.