The 2SD1931 is a silicon NPN epitaxial planar transistor manufactured by Rohm Semiconductor. It is designed for high-current switching applications, particularly in audio amplifiers and power supplies. This transistor features a high collector current capability and low saturation voltage, making it suitable for demanding applications where efficiency and power are critical.

Applications:

• Audio Amplifier Output Stages
• Switching Regulators in Power Supplies
• DC-DC Converters
• Motor Control Circuits

Features:

• High Collector Current (IC)
• Low Saturation Voltage (VCE(sat))
• High DC Current Gain (hFE)
• Fast Switching Speed

Benefits:

• High Power Handling: The high collector current capability allows for significant power output in amplifier and power supply applications.
• Efficient Operation: The low saturation voltage minimizes power dissipation, increasing overall efficiency.
• Simplified Circuit Design: High DC current gain reduces the need for multiple amplification stages.
• Reliable Performance: Designed for robust and stable operation in demanding environments.

Specifications:

The 2SD1931 typically features a collector-emitter voltage (VCEO) of 60V, a collector current (IC) of 7A, and a collector power dissipation (PC) of 30W. The DC current gain (hFE) is generally high, and the saturation voltage (VCE(sat)) is low at rated current. Package: TO-220.