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Same model may have multiple batches, images only for reference.
DTC114EU3HZGT106 Real Image
Same model may have multiple batches, images only for reference.

DTC114EU3HZGT106

Part No DTC114EU3HZGT106
Manufacturer Rohm Semiconductor
Catalog Transistors (BJT) - Single, Pre - Biased
Description DTC114EU3HZG IS A DIGITAL TRANSI / Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 200 mW Surface Mount UMT3
Datasheet
DTC114EU3HZGT106 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition 250 MHz
Power - Max 200 mW
Mounting Surface Mount
Case / Package SC-70, SOT-323
Supplier Device Package UMT3
Base Product Number DTC114
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075
Other Part Number DTC114EU3HZGT106TR,DTC114EU3HZGT106TRND,DTC114EU3HZGT106-ND,DTC114EU3HZGT106CT,DTC114EU3HZGT106DKR
Standard Package 3,000
Win Source Part Number 1325054-DTC114EU3HZGT106
Ultra Librarian 3D Model Ultra Librarian DTC114EU3HZGT106 CAD Model

Description

The Rohm Semiconductor DTC114EU3HZGT106 is an NPN pre-biased transistor with a maximum power of 200mW and a maximum collector emitter breakdown voltage of 50V.

  • Maximum Collector Current: 100mA
  • DC Current Gain: 30 @ 5mA and 5V
  • Frequency Transition: 250MHz
  • Package: SC-70, SOT-323
  • Supply and Demand Status: Currently unaffected

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4,590+ $0.0378 $173.5020
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10,950+ $0.0316 $346.0200
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