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Same model may have multiple batches, images only for reference.
FMG5AT148 Rohm Semiconductor
Same model may have multiple batches, images only for reference.

FMG5AT148

Part No FMG5AT148
Manufacturer Rohm Semiconductor
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2NPN PREBIAS 0.3W SMT5
Datasheet
FMG5AT148 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
Transistor Polarity 2 NPN - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 68 @ 5mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 250MHz
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package SMT5
Win Source Part Number 099906-FMG5AT148
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian FMG5AT148 CAD Model

Description

This is a Rohm Semiconductor transistor with a frequency transition of 250MHz.

  • Transistor Polarity: 2 NPN - Pre-Biased (Dual)
  • Resistor Values: 10k (Base R1), 47k (Emitter Base R2)
  • Application: Discrete semiconductor product
  • Lifecycle Status: Not for new designs
  • Case/Package: SMT5
  • Maximum Collector Current: 100mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Maximum Vce (sat): 300mV @ 250μA, 5mA
  • Collector Cut-off Current (max): 500nA
  • Typical Gain (hFE) (min): 68 @ 5mA, 5V
  • Maximum Power Dissipation: 300mW

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