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HS8K11TB

Name: HS8K11TB
Brand: Rohm Semiconductor
SKU: 776197
Availability: InStock
Rating: 4.91 (5 reviews)

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This model is a standard, industry-grade component frequently used in electronic manufacturing.

Part No	HS8K11TB
Manufacturer	Rohm Semiconductor
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET 2N-CH 30V 7A/11A HSML / Trans MOSFET N-CH 30V 7A/11A 8-Pin HSML EP T/R
Datasheet	HS8K11TB Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Rohm Semiconductor
Packaging	Reel package
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain Source Voltage	30V
Current - Continuous Drain (Id) @ 25°C	7A, 11A
Rds On (Maximum) @ Id, Vgs	17.9 mOhm @ 7A, 10V
Vgs(th) (Maximum) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs	11.1nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds	500pF @ 15V
Power - Max	2W
Operating Temperature Range	150°C (TJ)
Mounting	SMD
Package	8-UDFN Exposed Pad
Manufacturer Package	HSML3030L10
Win Source Part Number	776197-HS8K11TB
Popularity	Medium
Supply and Demand Status	Limited
Family Name	HS8K11
Introduction Date	April 08, 2014
ECCN	EAR99
Halogen Free	Compliant
Estimated EOL Date	2035
Ultra Librarian 3D Model	Ultra Librarian HS8K11TB CAD Model

Alternative Products

Description

The HS8K11TB is a dual N-channel MOSFET from Rohm Semiconductor.

Maximum Drain-Source Voltage: 30V
Continuous Drain Current: 7A, 11A @ 25°C
Mounting: SMD
Package Type: 8-UDFN Exposed Pad
Gate Feature: Logic Level
Maximum Gate-Source Voltage: 2.5V @ 1mA
Input Capacitance: 500pF @ 15V
Maximum Rds On: 17.9 mOhm @ 7A, 10V
Packaging: Reel
Power Rating: 2W
Family: HS8K11

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
375+	$0.1347	$50.5125
905+	$0.1105	$100.0025
1,405+	$0.1071	$150.4755
1,935+	$0.1036	$200.4660
2,500+	$0.1002	$250.5000
3,345+	$0.0898	$300.3810

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 30,000 pieces

MOQ: 375 pcs

Order Increment : 1 pcs

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