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QS5U17TR

Part No QS5U17TR
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 2A TSMT5
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.5V @ 1mA
Max Gate Charge 3.9nC @ 4.5V
Max Input Capacitance 175pF @ 10V
Maximum Gate-Source Voltage ±12V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 900mW (Ta)
Maximum Rds On at Id,Vgs 100 mOhm @ 2A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TSMT5
Dimension SOT-23-5 Thin, TSOT-23-5
Win Source Part Number 027054-QS5U17TR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian QS5U17TR CAD Model

Description

The Rohm Semiconductor QS5U17TR is an N-Channel MOSFET with a Schottky diode (isolated) feature.

  • Power Dissipation: 900mW (Ta)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 2A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 1.5V @ 1mA
  • Maximum Rds On: 100 mOhm @ 2A, 4.5V
  • Product Type: discrete semiconductor product
  • Package: TSMT5
  • Mounting: SMD (SMT) technology
  • Packaging: reel - TR
  • Supply and Demand Status: balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
315+ $0.1839 $57.9285
770+ $0.1510 $116.2700
1,185+ $0.1462 $173.2470
1,635+ $0.1415 $231.3525
2,115+ $0.1368 $289.3320
2,825+ $0.1227 $346.6275
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,890 pieces
MOQ: 315 pcs
Order Increment : 1 pcs
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