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Same model may have multiple batches, images only for reference.
QS6K21TR Real Image
Same model may have multiple batches, images only for reference.

QS6K21TR

Part No QS6K21TR
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 45V 1A 6-Pin TSMT T/R / MOSFET 2N-CH 45V 1A TSMT6
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 45V
Continuous Drain Current at 25°C 1A
Gate-Source Threshold Voltage 1.5V @ 1mA
Maximum Power Dissipation 1.25W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TSMT6 (SC-95)
Win Source Part Number 1091088-QS6K21TR
Popularity Medium
Supply and Demand Status Balance
Family Name QS6K21
Introduction Date April 15, 2009
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian QS6K21TR CAD Model

Description

The QS6K21TR is a dual N-channel standard FET designed and manufactured by Rohm Semiconductor.

  • Manufacturer: Rohm Semiconductor
  • Product Name: QS6K21TR
  • Type: Dual N-channel Standard FET
  • Case/Package: TSMT6 (SC-95)
  • Mounting: Surface-mount Technology (SMT)
  • Drain-Source Breakdown Voltage: 45V
  • Continuous Drain Current @ 25°C: Up to 1A
  • Gate-Source Threshold Voltage: 1.5V @ 1mA
  • Halogen-Free: Compliant
  • Estimated EOL Date: 2029
  • Packaging: Reels of TR
  • Power Dissipation (Max): 1.25W

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