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Same model may have multiple batches, images only for reference.
QS8K11TCR Rohm Semiconductor
Same model may have multiple batches, images only for reference.

QS8K11TCR

Part No QS8K11TCR
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 4V DRIVE NCH+NCH MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 3.5A
Maximum Rds On at Id,Vgs 50 mOhm @ 3.5A, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 3.3nC @ 5V
Max Input Capacitance 180pF @ 10V
Maximum Power Dissipation 1.5W
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TSMT8
Win Source Part Number 1091090-QS8K11TCR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian QS8K11TCR CAD Model

Description

The Rohm Semiconductor 2 N-Channel (Dual) FET is a high-performance discrete semiconductor product.

  • Channel Type: N-Channel (Dual)
  • Package: TSMT8
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 3.5A @ 25°C
  • Power Dissipation: 1.5W
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Input Capacitance: 180pF @ 10V
  • Rds On: 50 mOhm @ 3.5A, 10V
  • Supply and Demand: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
24+ $2.0973 $50.3352
59+ $1.7208 $101.5272
90+ $1.6671 $150.0390
124+ $1.6133 $200.0492
161+ $1.5595 $251.0795
215+ $1.3982 $300.6130
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,000 pieces
MOQ: 24 pcs
Order Increment : 1 pcs
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