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QST8TR

Part No QST8TR
Manufacturer Rohm Semiconductor
Catalog Transistors (BJT) - Arrays
Description TRANS 2PNP 12V 1.5A 6TSMT
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity 2 PNP (Dual)
Maximum Current Collector 1.5A
VCEO Maximum Collector-Emitter Breakdown Voltage 12V
Max Vce (sat) 200mV @ 25mA, 500mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 270 @ 200mA, 2V
Maximum Power Dissipation 1.25W
Frequency - Transition 400MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TSMT6 (SC-95)
Win Source Part Number 027069-QST8TR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian QST8TR CAD Model

Description

The QST8TR, from Rohm Semiconductor, is a silicon epitaxial planar type transistor. This transistor is engineered for high-frequency amplification and switching, common in modern communication systems and electronic devices that require efficient signal handling at high speeds. The 'TR' suffix, as with similar Rohm parts, typically denotes a tape and reel packaging configuration optimized for automated assembly lines.

Applications

  • RF Amplifiers: Used in amplifying radio frequency signals within wireless devices and communication equipment.
  • Oscillators: Implemented in oscillator circuits to generate stable signals at various frequencies.
  • High-Speed Switching: Suitable for circuits where fast switching is a critical requirement.
  • Mixers: Applied in mixer circuits for frequency conversion applications.
  • Signal Processing Circuits: Incorporated in various signal processing functions requiring high-frequency signal management.

Features

  • Low Noise: Minimizes signal distortion and maintains signal integrity in amplifier applications.
  • High Gain: Provides efficient signal amplification.
  • High Transition Frequency: Facilitates operation in high-frequency ranges.
  • Compact Package: Designed for space-saving implementations in compact devices.
  • Silicon Epitaxial Planar Structure: Ensures consistent and reliable performance.

Benefits

  • Enhanced Signal Clarity: Low noise ensures improved signal quality and minimal distortion.
  • Efficient Amplification: High gain allows for the effective amplification of even weak signals.
  • Versatile Application: Well-suited for a broad spectrum of high-frequency applications.
  • Compact Design Integration: The small package footprint is ideal for integration into devices with limited space.
  • Reliable Operation: The silicon epitaxial planar structure guarantees stable and long-lasting performance.

Additional Details

The QST8TR transistor generally uses a small surface mount package for efficient board utilization. The key electrical parameters to consider include collector-emitter voltage (VCEO), collector current (IC), and power dissipation, all optimized for high-frequency operation. It's important to refer to the official Rohm Semiconductor datasheet for comprehensive specifications, including thermal characteristics, package dimensions, and recommended operating conditions. The 'TR' suffix implies that the component is supplied on tape and reel for automated assembly, streamlining manufacturing processes.

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Pricing & Ordering

Quantity Unit Price Ext. Price
325+ $0.1783 $57.9475
790+ $0.1464 $115.6560
1,225+ $0.1418 $173.7050
1,685+ $0.1372 $231.1820
2,180+ $0.1327 $289.2860
2,915+ $0.1190 $346.8850
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 5,280 pieces
MOQ: 325 pcs
Order Increment : 1 pcs
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