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R5005CNJ TL

Name: R5005CNJ TL
Brand: Rohm Semiconductor
SKU: 288887
Availability: InStock
Rating: 4.93 (5 reviews)

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Part No	R5005CNJ TL
Manufacturer	Rohm Semiconductor
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 10V DRIVE LPTS
Datasheet	R5005CNJ TL Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Rohm Semiconductor
Packaging	Reel - TR
Status	Not For New Designs
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	500V
Continuous Drain Current at 25°C	5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Gate-Source Threshold Voltage	4.5V @ 1mA
Max Gate Charge	10.8nC @ 10V
Max Input Capacitance	320pF @ 25V
Maximum Gate-Source Voltage	±30V
Power Dissipation (Max)	40W (Tc)
Maximum Rds On at Id,Vgs	1.6 Ohm @ 2.5A, 10V
Temperature Range - Operating	150°C (TJ)
Mounting	SMD (SMT)
Case / Package	LPTS
Dimension	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number	046033-R5005CNJ TL
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian R5005CNJ TL CAD Model

Alternative Products

Description

The Rohm Semiconductor 046033-R5005CNJ TL MOSFET is a high-quality discrete semiconductor product designed for use in electronic devices.

Channel Type: N-channel
Power Dissipation: 40W (Tc)
Continuous Drain Current: 5A (Ta)
Gate-Source Threshold Voltage: 4.5V @ 1mA
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.6 Ohm @ 2.5A, 10V
Status: not for new designs
Temperature Range: 150°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 500V
Suitability: balance supply and demand status applications

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