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Same model may have multiple batches, images only for reference.
R5013ANXFU6 Real Image
Same model may have multiple batches, images only for reference.

R5013ANXFU6

Part No R5013ANXFU6
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 13A TO-220FM
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Bulk
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 1mA
Max Gate Charge 35nC @ 10V
Max Input Capacitance 1300pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 6.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FM
Dimension TO-220-2 Full Pack
Win Source Part Number 1091194-R5013ANXFU6
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian R5013ANXFU6 CAD Model

Description

The Rohm Semiconductor R5013ANXFU6 is an N-channel MOSFET with a drain-source breakdown voltage of 500V and a continuous drain current @ 25°C of 13A (Ta).

  • Mounting: Through Hole
  • Case/Package: TO-220FM
  • Maximum Power Dissipation: 50W (Tc)
  • Gate-Source Threshold Voltage: 4.5V @ 1mA
  • Maximum Rds On @ Id, Vgs: 380 mOhm @ 6.5A, 10V
  • Supply and Demand: Sufficient
  • New Design Status: Not for new designs
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $27.8852 $83.6556
6+ $22.8806 $137.2836
8+ $22.1656 $177.3248
11+ $21.4507 $235.9577
14+ $20.7357 $290.2998
19+ $18.5909 $353.2271
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,100 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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