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R6006ANDTL

Part No R6006ANDTL
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 6A CPT
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 1mA
Max Gate Charge 15nC @ 10V
Max Input Capacitance 460pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 40W (Tc)
Maximum Rds On at Id,Vgs 1.2 Ohm @ 3A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package CPT3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1091355-R6006ANDTL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian R6006ANDTL CAD Model

Description

The R6006ANDTL is a high-quality N-Channel MOSFET from Rohm Semiconductor.

  • Popularity: medium
  • Supply and Demand Status: balanced
  • Case/Package: CPT3

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.7085 $59.7975
85+ $1.4019 $119.1615
130+ $1.3580 $176.5400
180+ $1.3143 $236.5740
230+ $1.2705 $292.2150
305+ $1.1391 $347.4255
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 11,300 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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