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Same model may have multiple batches, images only for reference.
R6008ANX Real Image
Same model may have multiple batches, images only for reference.

R6008ANX

Part No R6008ANX
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 8A TO-220FM
Datasheet
R6008ANX Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Bulk
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 1mA
Max Gate Charge 21nC @ 10V
Max Input Capacitance 680pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 50W (Tc)
Maximum Rds On at Id,Vgs 800 mOhm @ 4A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FM
Dimension TO-220-2 Full Pack
Win Source Part Number 046046-R6008ANX
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian R6008ANX CAD Model

Description

This component is designed as a MOSFET that can be used in a variety of applications. It is a reliable component that can provide optimal performance.

  • Features: Easy to install
  • Usable in: A variety of applications
  • Maximum temperature: 150°C (TJ)
  • Maximum drain-source breakdown voltage: 600V

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.3319 $53.2760
95+ $1.0928 $103.8160
145+ $1.0587 $153.5115
200+ $1.0245 $204.9000
255+ $0.9904 $252.5520
340+ $0.8879 $301.8860
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,000 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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