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SIHG20N50C-E3

Part No SIHG20N50C-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 20A TO247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Bulk
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 76nC @ 10V
Max Input Capacitance 2942pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 250W (Tc)
Maximum Rds On at Id,Vgs 270 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247AC
Dimension TO-247-3
Win Source Part Number 090888-SIHG20N50C-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name SiHG20N50C
Introduction Date June 28, 2009
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2024
Ultra Librarian 3D Model Ultra Librarian SIHG20N50C-E3 CAD Model

Description

The 090888-SIHG20N50C-E3 MOSFET is an N-channel device with a drain-source breakdown voltage of 500V and a continuous drain current of 20A at 25°C.

  • Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current: 20A @ 25°C
  • Gate-Source Threshold Voltage: 5V @ 250μA
  • Maximum Gate Charge: 76nC @ 10V
  • Maximum Rds On: 270 mOhm @ 10A, 10V
  • Package: TO-247AC
  • Maximum Input Capacitance: 2942pF @ 25V
  • Power Dissipation (Tc): 250W
  • Operating Temperature Range (TJ): -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.2971 $51.8840
85+ $1.2150 $103.2750
130+ $1.1739 $152.6070
185+ $1.0918 $201.9830
240+ $1.0508 $252.1920
300+ $1.0098 $302.9400
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 99,958 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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