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Same model may have multiple batches, images only for reference.
R6010ANX Real Image
Same model may have multiple batches, images only for reference.

R6010ANX

Part No R6010ANX
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 10A TO-220FM
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Bulk
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 50W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FM
Dimension TO-220-2 Full Pack
Win Source Part Number 1091360-R6010ANX
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian R6010ANX CAD Model

Description

The Rohm Semiconductor R6010ANX is a MOSFET technology product manufactured by.

  • Packaging: Bulk
  • Mounting: Through Hole
  • Polarity: N-Channel
  • Power Dissipation: 50W (Tc)
  • Drive Voltage: 10V (Max Rds On, Min Rds On)
  • New Design Status: Not for new designs
  • Temperature Range: -150°C (TJ)
  • Case/Package: TO-220FM
  • Dimension: TO-220-2 Full Pack
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current: 10A (Ta)
  • Maximum Gate-Source Voltage: ±30V
  • Supply and Demand Status: Balanced

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