This MOSFET (Metal Oxide) is a N-Channel FET with a drain to source voltage (Vdss) of 600V and a current - continuous drain (Id) @ 25°C of 11A (Tc).

• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
• Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Package: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252
• Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
• Maximum Vgs: ±20V
• Operating Temperature Range: 150°C (TJ)
• Manufacturer: Rohm Semiconductor
• Other Names: 846-R6011END3TL1TR, 846-R6011END3TL1DKR, 846-R6011END3TL1CT