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Same model may have multiple batches, images only for reference.
R6030KNZ4C13
Same model may have multiple batches, images only for reference.

R6030KNZ4C13

Part No R6030KNZ4C13
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 30A TO247 / N-Channel 600 V 30A (Tc) 305W (Tc) Through Hole TO-247
Datasheet
R6030KNZ4C13 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Rohm Semiconductor
Series -
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 130mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2350 pF @ 25 V
FET Feature -
Power Dissipation (Max) 305W (Tc)
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247
Package / Case TO-247-3
Base Product Number R6030
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1355203-R6030KNZ4C13
Ultra Librarian 3D Model Ultra Librarian R6030KNZ4C13 CAD Model

Description

The R6030KNZ4C13 is a MOSFET transistor from Rohm Semiconductor. It is designed for discrete semiconductor applications and operates @ a maximum temperature of 150°C.

  • FET Type: MOSFET N-Channel
  • Operating Temperature: 150°C
  • Vdss: 600V
  • Id @ 25°C: 30A
  • Rds On (Max) @ Id, Vgs: 130mOhm
  • Vgs(th) (Max) @ Id: 5V
  • Qg @ Vgs: 56nC @ 10V
  • Package / Case: TO-247-3
  • Mounting Type: Through Hole

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Quantity Unit Price Ext. Price
6+ $9.7792 $58.6752
13+ $8.0239 $104.3107
20+ $7.7732 $155.4640
27+ $7.5224 $203.1048
35+ $7.2717 $254.5095
47+ $6.5195 $306.4165
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Availability: 400 pieces
MOQ: 6 pcs
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