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Same model may have multiple batches, images only for reference.
IRFU120NPBF Infineon Technologies
Same model may have multiple batches, images only for reference.

IRFU120NPBF

Part No IRFU120NPBF
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 9.4A I-PAK
Datasheet
IRFU120NPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 9.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 25nC @ 10V
Max Input Capacitance 330pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 48W (Tc)
Maximum Rds On at Id,Vgs 210 mOhm @ 5.6A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package IPAK (TO-251)
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 069602-IRFU120NPBF
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IRFU120NPBF CAD Model

Description

The Infineon Technologies IRFU120NPBF is a N-channel MOSFET transistor with a drain-source breakdown voltage of 100V and a continuous drain current of 9.4A at 25°C.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 9.4A @ 25°C
  • Gate-Source Threshold Voltage: 4V
  • Maximum Gate Charge: 25nC @ 10V
  • Maximum Input Capacitance: 330pF @ 25V
  • Package: IPAK (TO-251)
  • Popularity: High

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Pricing & Ordering

Quantity Unit Price Ext. Price
120+ $0.4192 $50.3040
295+ $0.3439 $101.4505
455+ $0.3332 $151.6060
625+ $0.3224 $201.5000
805+ $0.3117 $250.9185
1,075+ $0.2795 $300.4625
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 60,000 pieces
MOQ: 120 pcs
Order Increment : 1 pcs
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