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Same model may have multiple batches, images only for reference.
R6046ANZ1C9 Rohm Semiconductor
Same model may have multiple batches, images only for reference.

R6046ANZ1C9

Part No R6046ANZ1C9
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 46A TO247 / Trans MOSFET N-CH 600V 46A 3-Pin(3+Tab) TO-247 Bulk
Datasheet
R6046ANZ1C9 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Bulk
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 46A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4.5V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs 150nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 6000pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 120W (Tc)
Rds On (Maximum) @ Id, Vgs 90 mOhm @ 23A, 10V
Operating Temperature Range 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-247
Package TO-247-3
Win Source Part Number 793007-R6046ANZ1C9
Popularity Medium
Supply and Demand Status Balance
Family Name R6046ANZ1
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian R6046ANZ1C9 CAD Model

Description

The R6046ANZ1C9 MOSFET from Rohm Semiconductor is a high-performance device.

  • Maximum Continuous Drain Current: 46A
  • Maximum Power Dissipation: 120W
  • Channel Type: N
  • Drain-Source Voltage Rating: 600V
  • Gate-Source Threshold Voltage: 4.5V @ 1mA
  • Gate Charge: 150nC @ 10V
  • Input Capacitance: 6000pF @ 25V
  • Maximum Rds On: 90 mOhm @ 23A @ 10V
  • Package Type: TO-247-3
  • Operating Temperature Range: -55°C to 150°C
  • REACH Regulations: Unaffected
  • ECCN: EAR99

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