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RD3L08BGNTL

Name: RD3L08BGNTL
Brand: Rohm Semiconductor
SKU: 1354456
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	RD3L08BGNTL
Manufacturer	Rohm Semiconductor
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 60V 80A TO252 / N-Channel 60 V 80A (Tc) 119W (Tc) Surface Mount TO-252
Datasheet	RD3L08BGNTL Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr	Rohm Semiconductor
Series	-
Package	Tape & Reel
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	5.5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id	2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	71 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3620 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	119W (Tc)
Temperature Range - Operating	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number	RD3L08
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Win Source Part Number	1354456-RD3L08BGNTL
Ultra Librarian 3D Model	Ultra Librarian RD3L08BGNTL CAD Model

Alternative Products

Description

The RD3L08BGNTL is a N-Channel MOSFET designed for various applications in electronic circuits. Manufactured by Rohm Semiconductor, this MOSFET offers a drain to source voltage (Vdss) of 60V and a continuous drain current (Id) of 80A @ 25°C.

FET Type: MOSFET N-Channel
Vdss: 60V
Id @ 25°C: 80A
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 80A, 10V
Qg @ Vgs: 71 nC @ 10V
Package / Case: TO-252-3, 2 Leads+Tab
Mounting Type: Surface Mount
Power Dissipation (Max): 119W @ Tc = 25°C
Standard: AEC-Q100

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