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Same model may have multiple batches, images only for reference.
RP1E100XNTR Rohm Semiconductor
Same model may have multiple batches, images only for reference.

RP1E100XNTR

Part No RP1E100XNTR
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 10A MPT6 / Trans MOSFET N-CH Si 30V 10A 6-Pin MPT T/R
Datasheet
RP1E100XNTR Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel package
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Vgs(th) (Maximum) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs 11nC @ 5V
Input Capacitance (Ciss) (Maximum) @ Vds 800pF @ 10V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 2W (Ta)
Rds On (Maximum) @ Id, Vgs 13 mOhm @ 10A, 10V
Operating Temperature Range 150°C (TJ)
Mounting SMD
Manufacturer Package MPT6
Package 6-SMD, Flat Leads
Win Source Part Number 793354-RP1E100XNTR
Popularity Medium
Supply and Demand Status Limited
Family Name RP1E100XN
Introduction Date August 31, 2010
ECCN EAR99
Halogen Free Not Compliant
Estimated EOL Date 2022
Ultra Librarian 3D Model Ultra Librarian RP1E100XNTR CAD Model

Description

The Rohm Semiconductor RP1E100XN is a MOSFET that has a current-continuous drain of 10A (Ta) and a drain source voltage of 30V.

  • Current-Continuous Drain: 10A (Ta)
  • Drain Source Voltage: 30V
  • Gate Charge: 11nC @ 5V
  • Input Capacitance: 800pF @ 10V
  • Maximum Power Dissipation: 2W (Ta)
  • Rds On: 13 mOhm @ 10A, 10V
  • Channel Type: N
  • Vgs(th): 2.5V @ 1mA
  • Manufacturer: Rohm Semiconductor
  • Win Source Part Number: 793354
  • Status: Obsolete (EOL)
  • Popularity: Medium

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