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Same model may have multiple batches, images only for reference.
RQ3E080GNTB Real Image
Same model may have multiple batches, images only for reference.

RQ3E080GNTB

Part No RQ3E080GNTB
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 8A 8-HSMT
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 5.8nC @ 10V
Max Input Capacitance 295pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta), 15W (Tc)
Maximum Rds On at Id,Vgs 16.7 mOhm @ 8A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-HSMT (3.2x3)
Dimension 8-PowerVDFN
Win Source Part Number 1092616-RQ3E080GNTB
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Automotive, Industrial
Ultra Librarian 3D Model Ultra Librarian RQ3E080GNTB CAD Model

Description

The RQ3E080GNTB electronic component from Rohm Semiconductor is an active product that is used in power management, automotive, and industrial applications.

  • Popularity: Medium
  • Supply and Demand Status: Balanced
  • Maximum Rds On @ Id,Vgs: 16.7 mOhm @ 8A, 10V
  • Continuous Drain Current @ 25°C: 8A (Ta)
  • Operating Temperature Range: 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
290+ $0.2004 $58.1160
705+ $0.1645 $115.9725
1,090+ $0.1594 $173.7460
1,500+ $0.1542 $231.3000
1,940+ $0.1491 $289.2540
2,595+ $0.1337 $346.9515
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,680 pieces
MOQ: 290 pcs
Order Increment : 1 pcs
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