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Same model may have multiple batches, images only for reference.
RQ3E150MNTB1 Real Image
Same model may have multiple batches, images only for reference.

RQ3E150MNTB1

Part No RQ3E150MNTB1
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 15A HSMT8
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 15A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 1100pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 6.7 mOhm @ 15A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-HSMT (3.2x3)
Dimension 8-PowerVDFN
Win Source Part Number 1092623-RQ3E150MNTB1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RQ3E150MNTB1 CAD Model

Description

The 1092623-RQ3E150MNTB1 is a MOSFET electronic component manufactured by Rohm Semiconductor.

  • Discrete semiconductor product with N-channel polarity
  • Power dissipation: 2W (Ta)
  • Maximum drain-source breakdown voltage: 30V
  • Continuous drain current: 15A (Ta) @ 25°C
  • Gate-source threshold voltage: 2.5V @ 1mA
  • Maximum gate-source voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 6.7 mOhm @ 15A, 10V
  • Supply and demand status of this product is currently in balance

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