The RQ3L050GNTB is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by Rohm Semiconductor. This MOSFET is designed for use in a variety of switching and amplification applications, providing efficient and reliable performance in a small package.

Applications

• Load switching
• Power management circuits
• DC-DC converters
• Motor control
• Backlight inverters
• Portable devices
• LED Drivers

Features

• Low on-resistance (RDS(on))
• Low gate charge (Qg)
• High-speed switching
• Small package size
• RoHS compliant
• Trench gate structure

Benefits

• Minimizes power loss and improves efficiency.
• Reduces switching losses and improves efficiency.
• Enables faster circuit operation.
• Suitable for high-density circuit boards.
• Meets environmental regulations.
• Enhanced switching performance.

Specifications

The RQ3L050GNTB has a drain-source voltage (VDS) of -30V. The gate-source voltage (VGS) is ±20V. The drain current (ID) is -3A. The on-resistance (RDS(on)) is 50 mOhms at VGS = -10V. It is available in a SOT-23 package. The operating temperature range is -55°C to +150°C.

This P-channel MOSFET is commonly used in applications where efficient switching and low on-resistance are critical. Its small size and high-speed switching capabilities make it suitable for a wide range of portable and power management applications.