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SI4186DY-T1-GE3

Part No SI4186DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 35.8A 8SO
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Vishay
Series TrenchFET®
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 35.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 90 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3630 pF @ 10 V
Power Dissipation (Max) 3W (Ta), 6W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
Base Product Number SI4186
Standard Package 2,500 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 666322-SI4186DY-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI4186DY-T1-GE3 CAD Model

Description

The SI4186DY-T1-GE3 is a N-channel MOSFET transistor from Vishay's TrenchFET series.

  • Vdss: 20V
  • Id: 35.8A @ 25°C
  • Rds On: 2.6mOhm @ 15A and 10V Vgs
  • Power Dissipation: 3W (Ta) and 6W (Tc)
  • Mounting: Surface mountable
  • Package: 8-SOIC
  • Qg: 90nC @ 10V
  • Ciss: 3630pF @ 10V
  • Operating Temperature: -55°C to 150°C
  • Drive Voltage: 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.0113 $50.5650
125+ $0.8298 $103.7250
190+ $0.8039 $152.7410
260+ $0.7779 $202.2540
335+ $0.7520 $251.9200
445+ $0.6742 $300.0190
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,300 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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