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RS1E220ATTB1

Part No RS1E220ATTB1
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 22A/76A 8HSOP  /  P-Channel 30 V 22A (Ta), 76A (Tc) 3W (Ta) Surface Mount 8-HSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Rohm Semiconductor
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 22A (Ta), 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.1mOhm @ 22A, 10V
Vgs(th) (Max) @ Id 2.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5850 pF @ 15 V
Power Dissipation (Max) 3W (Ta)
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 8-HSOP
Package / Case 8-PowerTDFN
Base Product Number RS1E
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Other Names RS1E220ATTB1TR,RS1E220ATTB1DKR,RS1E220ATTB1CT
Standard Package 2,500
Win Source Part Number 1089003-RS1E220ATTB1
Ultra Librarian 3D Model Ultra Librarian RS1E220ATTB1 CAD Model

Description

The Rohm Semiconductor RS1E220ATTB1 is a P-channel MOSFET transistor with a maximum drain to source voltage of 30V and a continuous drain current of 22A (Ta) and 76A (Tc) @ 25°C.

  • Maximum On-State Resistance: 4.1mOhm @ 22A and 10V
  • Gate Charge: 130 nC @ 10 V
  • Package: 8-PowerTDFN package
  • Gate-Source Threshold Voltage: 2.5V @ 2mA

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.4553 $50.9355
85+ $1.1941 $101.4985
130+ $1.1568 $150.3840
180+ $1.1195 $201.5100
235+ $1.0821 $254.2935
310+ $0.9702 $300.7620
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 35 pcs
Order Increment : 2500 pcs
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