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RS1E240BNTB

Part No RS1E240BNTB
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 24A 8HSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 24A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 70nC @ 10V
Max Input Capacitance 3900pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3W (Ta), 30W (Tc)
Maximum Rds On at Id,Vgs 3.2 mOhm @ 24A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-HSOP
Dimension 8-PowerTDFN
Win Source Part Number 1092691-RS1E240BNTB
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RS1E240BNTB CAD Model

Description

The Rohm Semiconductor RS1E240BNTB is an N-channel MOSFET transistor designed for use in discrete semiconductor products.

  • Channel Type: N-Channel
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 24A (Ta)
  • Rds On: 3.2 mOhm @ 24A, 10V
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Mounting Type: SMD (SMT)
  • Package: 8-HSOP
  • Maximum Power Dissipation (Ta): 3W
  • Maximum Power Dissipation (Tc): 30W
  • Maximum Gate-Source Voltage: ±20V
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.4340 $58.5900
325+ $0.3562 $115.7650
505+ $0.3451 $174.2755
695+ $0.3339 $232.0605
895+ $0.3229 $288.9955
1,200+ $0.2894 $347.2800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,070 pieces
MOQ: 135 pcs
Order Increment : 1 pcs
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