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Same model may have multiple batches, images only for reference.
RS1E260ATTB1 Real Image
Same model may have multiple batches, images only for reference.

RS1E260ATTB1

Part No RS1E260ATTB1
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 26A/80A 8HSOP / P-Channel 30 V 26A (Ta), 80A (Tc) 3W (Ta) Surface Mount 8-HSOP
Datasheet
RS1E260ATTB1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Rohm Semiconductor
Packaging Reel - TR
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 26A, 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.1mOhm @ 26A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 175 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7850 pF @ 15 V
Power Dissipation (Max) 3W
Temperature Range - Operating 150°C (TJ)
Mounting Surface Mount
Supplier Device Package 8-HSOP
Case / Package 8-PowerTDFN
Base Product Number RS1E
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number RS1E260ATTB1TR,RS1E260ATTB1DKR,RS1E260ATTB1CT
Standard Package 2,500
Win Source Part Number 1324657-RS1E260ATTB1
Ultra Librarian 3D Model Ultra Librarian RS1E260ATTB1 CAD Model

Description

The RS1E260ATTB1 is a P-channel MOSFET transistor.

  • Drain to Source Voltage: 30V
  • Continuous Drain Current: 26A @ 25°C and 80A (Tc)
  • Maximum Rds On: 3.1mOhm @ 26A, 10V
  • Gate Charge: 175 nC @ 10V
  • Input Capacitance: 7850 pF @ 15V
  • Maximum Vgs(th): 2.5V @ 1mA
  • Maximum Vgs: ±20V
  • Package: Reel - TR
  • Standard Package: 2,500
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSOP

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Availability: 7,500 pieces
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