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RS1E300GNTB Real Image1 RS1E300GNTB Real Image2
Same model may have multiple batches, images only for reference.
RS1E300GNTB Real Image1 RS1E300GNTB Real Image2
RS1E300GNTB Real Image1 RS1E300GNTB Real Image2
Same model may have multiple batches, images only for reference.

RS1E300GNTB

Part No RS1E300GNTB
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 30A 8-HSOP
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 30A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 39.8nC @ 10V
Max Input Capacitance 2500pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3W (Ta), 33W (Tc)
Maximum Rds On at Id,Vgs 2.2 mOhm @ 30A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-HSOP
Dimension 8-PowerTDFN
Win Source Part Number 1092694-RS1E300GNTB
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RS1E300GNTB CAD Model

Description

The RS1E300GNTB is an N-channel MOSFET from Rohm Semiconductor.

  • Power Dissipation: 3W (Ta) and 33W (Tc)
  • Application: Discrete Semiconductor Products
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds on @ Id, Vgs: 2.2 mOhm @ 30A, 10V
  • Supply and Demand Status: Balanced

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