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Same model may have multiple batches, images only for reference.
RSE002N06TL Rohm Semiconductor
Same model may have multiple batches, images only for reference.

RSE002N06TL

Part No RSE002N06TL
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 0.25A EMT3
Datasheet
RSE002N06TL Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 250mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 1mA
Max Input Capacitance 15pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 150mW (Ta)
Maximum Rds On at Id,Vgs 2.4 Ohm @ 250mA, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package EMT3
Dimension SC-75, SOT-416
Win Source Part Number 027519-RSE002N06TL
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RSE002N06TL CAD Model

Description

The Rohm Semiconductor 027519-RSE002N06TL is an N-channel MOSFET with a drain-source breakdown voltage of 60V and a continuous drain current of 250mA @ 25°C.

  • Mounting Style: SMD (SMT)
  • New Designs: not for new designs
  • Power Dissipation (Max): 150mW (Ta)
  • Drive Voltage (max Rds on): 2.5V
  • Drive Voltage (min Rds on): 10V
  • Maximum Rds On @ Id, Vgs: 2.4 Ohm @ 250mA, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
810+ $0.0715 $57.9150
1,970+ $0.0587 $115.6390
3,045+ $0.0570 $173.5650
4,195+ $0.0551 $231.1445
5,425+ $0.0533 $289.1525
7,265+ $0.0477 $346.5405
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Availability: 120,000 pieces
MOQ: 810 pcs
Order Increment : 1 pcs
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