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Same model may have multiple batches, images only for reference.
RQ3E130MNTB1 Rohm Semiconductor
Same model may have multiple batches, images only for reference.

RQ3E130MNTB1

Part No RQ3E130MNTB1
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 13A HSMT8
Datasheet
RQ3E130MNTB1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs 14nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 840pF @ 15V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 2W (Ta)
Rds On (Maximum) @ Id, Vgs 8.1 mOhm @ 13A, 10V
Operating Temperature Range 150°C (TJ)
Mounting SMD
Manufacturer Package 8-HSMT (3.2x3)
Package 8-PowerVDFN
Win Source Part Number 793364-RQ3E130MNTB1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian RQ3E130MNTB1 CAD Model

Description

The Rohm Semiconductor RQ3E130MNTB1 is a MOSFET transistor designed for discrete semiconductor products.

  • Current Continuous Drain: 13A
  • Drain Source Voltage: 30V
  • Channel Type: N
  • Gate-Source Voltage: ±20V
  • Maximum Power Dissipation: 2W
  • Maximum Rds On: 8.1 mOhm @ 13A, 10V
  • Package: 8-PowerVDFN
  • Packaging: Reel
  • Family Name: HSMT (3.2x3)
  • Supply and Demand Status: Limited

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Quantity Unit Price Ext. Price
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385+ $0.2606 $100.3310
600+ $0.2518 $151.0800
855+ $0.2341 $200.1555
1,110+ $0.2253 $250.0830
1,390+ $0.2165 $300.9350
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