The Rohm Semiconductor RSF015N06TL is an N-channel MOSFET with a 60V drain-source breakdown voltage and a 1.5A continuous drain current @ 25°C.

• Power Dissipation (max): 800mW (Ta)
• Drive Voltage (max Rds On, Min Rds On): 4V, 10V
• Category: discrete semiconductor products
• Case/Package: TUMT3 with 3-SMD, flat leads
• Gate-Source Threshold Voltage: 2.5V @ 1mA
• Maximum Gate Charge: 2nC @ 5V
• Maximum Gate-Source Voltage: 20V
• Maximum Rds On @ Id, Vgs: 290 mOhm @ 1.5A, 10V
• Supply and Demand Status: limited
• Weight: - grams
• Temperature Range for Operating: 150°C (TJ)