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Same model may have multiple batches, images only for reference.
RSJ400N10TL Real Image
Same model may have multiple batches, images only for reference.

RSJ400N10TL

Part No RSJ400N10TL
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 40A LPTS
Datasheet
RSJ400N10TL Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 90nC @ 10V
Max Input Capacitance 3600pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.35W (Ta), 50W (Tc)
Maximum Rds On at Id,Vgs 27 mOhm @ 40A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package LPTS (SC-83)
Dimension SC-83
Win Source Part Number 1092796-RSJ400N10TL
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1k pcs
Ultra Librarian 3D Model Ultra Librarian RSJ400N10TL CAD Model

Description

The Rohm Semiconductor RSJ400N10TL is an N-channel MOSFET with a drain-source breakdown voltage of 100V and a continuous drain current @ 25°C of 40A (Tc).

  • Manufacturer: Rohm Semiconductor
  • Channel Type: N-channel
  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 40A (Tc) @ 25°C
  • Mounting: Reel
  • Case/Package: LPTS (SC-83)
  • Power Dissipation: 1.35W (Ta), 50W (Tc)
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Maximum Rds On: 27 mOhm @ 40A, 10V
  • Application: Discrete semiconductor products
  • Supply and Demand Status: Balanced
  • Package Quantity: 1k pcs

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Quantity Unit Price Ext. Price
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44+ $2.2858 $100.5752
68+ $2.2143 $150.5724
94+ $2.1429 $201.4326
121+ $2.0715 $250.6515
162+ $1.8572 $300.8664
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Availability: 7,000 pieces
MOQ: 18 pcs
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