The Rohm Semiconductor RSJ400N10TL is an N-channel MOSFET with a drain-source breakdown voltage of 100V and a continuous drain current at 25°C of 40A (Tc). It is mounted on a reel and has an LPTS (SC-83) case/package. The MOSFET has a maximum power dissipation of 1.35W (Ta), 50W (Tc) and a gate-source threshold voltage of 2.5V @ 1mA. The maximum Rds On at Id, Vgs is 27 mOhm @ 40A, 10V. The MOSFET is designed for use in discrete semiconductor products and has a balance supply and demand status. The package contains 1k pcs.