The Rohm Semiconductor MOSFET is a P-channel device with a drain-source breakdown voltage of 30V and a continuous drain current of 3A @ 25°C.

• Maximum Rds On: 80 mOhm @ 3A and 10V
• Gate-Source Threshold Voltage: 2.5V @ 1mA
• Max Gate Charge: 6nC @ 5V
• Maximum Input Capacitance: 440pF @ 10V
• Maximum Gate-Source Voltage: ±20V
• Case/Package: TSMT6 (SC-95), which includes SOT-23-6 Thin and TSOT-23-6 dimensions
• Recommendation for New Designs: not recommended for new designs
• Operating Temperature Range: 150°C (TJ)
• Category: discrete semiconductor product
• Popularity: medium popularity