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RSS065N03TB1

Part No RSS065N03TB1
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 6.5A 8SOP
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Rohm Semiconductor
Package Tape & Reel
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 27mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 8.6 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 430 pF @ 10 V
Power Dissipation (Max) 2W (Ta)
Temperature Range - Operating 150°C
Mounting Type Surface Mount
Supplier Device Package 8-SOP
Package / Case 8-SOIC (0.154", 3.90mm Width)
Standard Package 2,500 pcs
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 299430-RSS065N03TB1
Ultra Librarian 3D Model Ultra Librarian RSS065N03TB1 CAD Model

Description

The RSS065N03TB1 is a single FET, MOSFET product from Rohm Semiconductor.

  • Product Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs
  • Win Source Part Number: 299430
  • Type: N-Channel MOSFET
  • Drain to Source Voltage (Vdss): 30V
  • Continuous Drain Current (Id): 6.5A @ 25°C
  • Rds On (Max): 27mOhm @ 6.5A and 10V
  • Vgs(th) (Max): 2.5V @ 1mA
  • Power Dissipation (Max): 2W @ ambient temperature (Ta)
  • Package Type: 8-SOIC, with a width of 0.154 inches
  • Gate Charge (Qg) (Max): 8.6nC @ 5V
  • Input Capacitance (Ciss) (Max): 430pF @ 10V
  • Maximum Gate-Source Voltage: ±20V
  • Temperature Range: -40°C to 150°C
  • ECCN: EAR99, indicating it has no export restrictions
  • MSL Level: 1, which means it has an unlimited shelf life

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