This MOSFET electronic component is manufactured by Rohm Semiconductor.

• Packaging: reel - TR
• Mounting: SMD (SMT)
• Product Type: Discrete semiconductor product
• Polarity: N-Channel
• Popularity: Medium
• Fake Products Risk: 62% in the open market
• Supply and Demand Status: sufficient
• Power Dissipation: 2W (Ta)
• Drain-Source Breakdown Voltage: 45V
• Continuous Drain Current: 7A (Ta)
• Maximum Rds On @ Id,Vgs: 25 mOhm @ 7A, 10V
• Maximum Gate-Source Voltage: 20V
• Maximum Gate Charge: 16.8nC @ 5V
• Maximum Input Capacitance: 1000pF @ 10V
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Recommendation: Not for new designs
• Case/Package: 8-SOP
• Dimension: 8-SOIC (0.154", 3.90mm Width)