The Rohm Semiconductor MOSFET is a N-Channel polarity electronic component with a Drain-Source Breakdown Voltage of 30V and Continuous Drain Current @ 25°C of 10A (Ta).

• Max Rds On @ Id,Vgs: 13 mOhm @ 10A, 10V
• Max Gate Charge: 14nC @ 5V
• Maximum Gate-Source Voltage: 20V
• Gate-Source Threshold Voltage: 2.5V @ 1mA
• Package: 8-SOIC (0.154", 3.90mm Width)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Applications: Discrete Semiconductor Products
• Power Dissipation (Max): 2W (Ta)
• Status: Active
• Temperature Range - Operating: 150°C (TJ)
• Supply and Demand Status: Sufficient