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Same model may have multiple batches, images only for reference.
RSS125N03TB Real Image
Same model may have multiple batches, images only for reference.

RSS125N03TB

Part No RSS125N03TB
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 12.5A 8-SOIC
Datasheet
RSS125N03TB Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 12.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 28nC @ 5V
Max Input Capacitance 1670pF @ 10V
Maximum Gate-Source Voltage 20V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 8.9 mOhm @ 12.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 116171-RSS125N03TB
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Power Management, Industrial
Ultra Librarian 3D Model Ultra Librarian RSS125N03TB CAD Model

Description

The Rohm Semiconductor RSS125N03TB is a medium-popularity electronic component that is manufactured by Rohm Semiconductor.

  • Win Source part number: 116171-RSS125N03TB
  • Technology: MOSFET
  • Polarity: N-Channel
  • Maximum Power Dissipation: 2W (Ta)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 12.5A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Maximum Gate-Source Voltage: 20V
  • Maximum Rds On @ Id,Vgs: 8.9 mOhm @ 12.5A, 10V
  • Maximum Gate Charge: 28nC @ 5V
  • Maximum Input Capacitance: 1670pF @ 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $12.0224 $60.1120
12+ $9.8649 $118.3788
19+ $9.5565 $181.5735
25+ $9.2481 $231.2025
33+ $8.9397 $295.0101
44+ $8.0157 $352.6908
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