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Same model may have multiple batches, images only for reference.
RTE002P02TL Rohm Semiconductor
Same model may have multiple batches, images only for reference.

RTE002P02TL

Part No RTE002P02TL
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 0.2A SOT416
Datasheet
RTE002P02TL Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 2V @ 1mA
Max Input Capacitance 50pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 150mW (Ta)
Maximum Rds On at Id,Vgs 1.5 Ohm @ 200mA, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package EMT3
Dimension SC-75, SOT-416
Win Source Part Number 027625-RTE002P02TL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RTE002P02TL CAD Model

Description

The Rohm Semiconductor RTE002P02TL is a P-channel MOSFET designed for surface mount applications.

  • It comes in an EMT3 package and has a drain-source breakdown voltage of 20V.
  • The MOSFET has a continuous drain current of 200mA @ 25°C and a gate-source threshold voltage of 2V @ 1mA.
  • It has a maximum Rds On of 1.5 Ohm @ 200mA and 4.5V.
  • The RTE002P02TL has a maximum gate-source voltage of ±12V and a maximum input capacitance of 50pF @ 10V.
  • The MOSFET is commonly used in electronic circuits.

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620+ $0.0809 $50.1580
1,510+ $0.0664 $100.2640
2,335+ $0.0643 $150.1405
3,220+ $0.0622 $200.2840
4,155+ $0.0602 $250.1310
5,560+ $0.0540 $300.2400
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