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RTF010P02TL

Part No RTF010P02TL
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 1A TUMT3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 2V @ 1mA
Max Gate Charge 2.1nC @ 4.5V
Max Input Capacitance 150pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 800mW (Ta)
Maximum Rds On at Id,Vgs 390 mOhm @ 1A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TUMT3
Dimension 3-SMD, Flat Leads
Win Source Part Number 027626-RTF010P02TL
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RTF010P02TL CAD Model

Description

The RTF010P02TL is a P-channel MOSFET designed by Rohm Semiconductor.

  • Package: TUMT3
  • Leads: 3-SMD flat leads
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 1A @ 25°C
  • Gate-Source Voltage: ±12V
  • Rds on @ Id, Vgs: 390 mOhm @ 1A, 4.5V
  • Popularity: Medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.4399 $50.5885
280+ $0.3610 $101.0800
430+ $0.3497 $150.3710
595+ $0.3384 $201.3480
765+ $0.3271 $250.2315
1,025+ $0.2933 $300.6325
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 195,500 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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