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Same model may have multiple batches, images only for reference.
RTQ020N05TR Real Image
Same model may have multiple batches, images only for reference.

RTQ020N05TR

Part No RTQ020N05TR
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 45V 2A TSMT6
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 45V
Continuous Drain Current at 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.5V @ 1mA
Max Gate Charge 2.3nC @ 4.5V
Max Input Capacitance 150pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 600mW (Ta)
Maximum Rds On at Id,Vgs 190 mOhm @ 2A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TSMT6 (SC-95)
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 1093059-RTQ020N05TR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RTQ020N05TR CAD Model

Description

The Rohm Semiconductor RTQ020N05TR MOSFET is a N-Channel device from Rohm Semiconductor.

  • Maximum Power Dissipation: 600mW (Ta)
  • Drain-Source Breakdown Voltage: 45V
  • Continuous Drain Current @ 25°C: 2A (Ta)
  • Maximum Rds On @ Id,Vgs: 190 mOhm @ 2A, 4.5V
  • Gate-Source Threshold Voltage: 1.5V @ 1mA
  • Maximum Gate-Source Voltage: ±12V
  • Case/Package: TSMT6 (SC-95)
  • Dimension: SOT-23-6 Thin, TSOT-23-6
  • Category: Discrete Semiconductor Products

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3,575+ $0.0647 $231.3025
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6,125+ $0.0566 $346.6750
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