The RU1C001UNTCL is an N-channel MOSFET manufactured by Rohm Semiconductor.

• Power Dissipation: It has a maximum power dissipation of 150mW (Ta) and a maximum continuous drain current of 100mA (Ta).
• Gate-Source Threshold Voltage: The MOSFET has a gate-source threshold voltage of 1V @ 100μA and a maximum input capacitance of 7.1pF @ 10V.
• Rds On: It has a maximum Rds On @ Id, Vgs of 3.5 Ohm @ 100mA, 4.5V.
• Mounting: The RU1C001UNTCL is a surface-mount device (SMD) and comes in a UMT3F case/package with a dimension of SC-85.
• Temperature: It has a temperature range for operating of 150°C (TJ) and is an active electronic component with a high popularity rating in the market.
• Compliance: The RU1C001UNTCL is ECCN EAR99 compliant and has an estimated EOL date of 2031.