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Same model may have multiple batches, images only for reference.
RUE002N05TL Rohm Semiconductor
Same model may have multiple batches, images only for reference.

RUE002N05TL

Part No RUE002N05TL
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 50V 0.2A EMT3
Datasheet
RUE002N05TL Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 50V
Continuous Drain Current at 25°C 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Gate-Source Threshold Voltage 1V @ 1mA
Max Input Capacitance 25pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 150mW (Ta)
Maximum Rds On at Id,Vgs 2.2 Ohm @ 200mA, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package EMT3
Dimension SC-75, SOT-416
Win Source Part Number 1093068-RUE002N05TL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RUE002N05TL CAD Model

Description

The Rohm Semiconductor RUE002N05TL is an N-channel MOSFET that is designed for use in electronic devices.

  • Manufacturer: Rohm Semiconductor
  • Product Name: RUE002N05TL
  • Type: N-channel MOSFET
  • Power Dissipation (Max): 150mW (Ta)
  • Drain-Source Breakdown Voltage: 50V
  • Continuous Drain Current @ 25°C: 200mA (Ta)
  • Gate-Source Threshold Voltage: 1V @ 1mA
  • Mounting: SMD (SMT)
  • Dimension: SC-75, SOT-416
  • Temperature Range: 150°C (TJ)
  • Application: Discrete Semiconductor Products
  • Maximum Rds On @ Id,Vgs: 2.2 Ohm @ 200mA, 4.5V
  • Supply and Demand: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
575+ $0.1011 $58.1325
1,395+ $0.0829 $115.6455
2,160+ $0.0804 $173.6640
2,970+ $0.0778 $231.0660
3,845+ $0.0752 $289.1440
5,140+ $0.0675 $346.9500
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Availability: 7,000 pieces
MOQ: 575 pcs
Order Increment : 1 pcs
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