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Same model may have multiple batches, images only for reference.
RUM003N02 Real Image
Same model may have multiple batches, images only for reference.

RUM003N02

Part No RUM003N02
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 300MA VMT3
Datasheet
RUM003N02 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4V
Gate-Source Threshold Voltage 1V @ 1mA
Max Input Capacitance 25pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 150mW (Ta)
Maximum Rds On at Id,Vgs 1 Ohm @ 300mA, 4V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package VMT3
Dimension SOT-723
Win Source Part Number 095622-RUM003N02
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RUM003N02 CAD Model

Description

The Rohm Semiconductor RUM003N02 is an N-channel MOSFET transistor that is designed to handle a maximum power dissipation of 150mW @ a temperature range of -55°C to 150°C.

  • Mounting: Surface mount device
  • Packaging: Available in VMT3 packaging
  • Popularity: A popular transistor
  • Common Usage: Commonly used in a wide range of electronic devices, including power supplies, motor control circuits, and audio amplifiers
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 300mA @ 25°C
  • Performance and Reliability: Offers excellent performance and reliability under varying load conditions

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985+ $0.0589 $58.0165
2,385+ $0.0485 $115.6725
3,660+ $0.0474 $173.4840
5,000+ $0.0462 $231.0000
6,580+ $0.0439 $288.8620
8,825+ $0.0393 $346.8225
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