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Same model may have multiple batches, images only for reference.
RUQ050N02TR Real Image
Same model may have multiple batches, images only for reference.

RUQ050N02TR

Part No RUQ050N02TR
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 5A TSMT6
Datasheet
RUQ050N02TR Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 1.3V @ 1mA
Max Gate Charge 12nC @ 4.5V
Max Input Capacitance 900pF @ 10V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 1.25W (Ta)
Maximum Rds On at Id,Vgs 30 mOhm @ 5A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TSMT6 (SC-95)
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 027653-RUQ050N02TR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RUQ050N02TR CAD Model

Description

The RUQ050N02TR is an N-Channel MOSFET manufactured by Rohm Semiconductor, which is not for new designs. This SMD (SMT) mounted MOSFET has a power dissipation of 1.25W (Ta) and is categorized under Discrete Semiconductor Products.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 5A (Ta)
  • Maximum Gate-Source Voltage: ±10V
  • Product Package: Available in TSMT6 (SC-95) case/package and SOT-23-6 Thin, TSOT-23-6 dimension

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Pricing & Ordering

Quantity Unit Price Ext. Price
215+ $0.2740 $58.9100
515+ $0.2249 $115.8235
800+ $0.2178 $174.2400
1,100+ $0.2108 $231.8800
1,420+ $0.2037 $289.2540
1,900+ $0.1827 $347.1300
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 4,030 pieces
MOQ: 215 pcs
Order Increment : 1 pcs
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