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Same model may have multiple batches, images only for reference.
RW1A030APT2CR Rohm Semiconductor
Same model may have multiple batches, images only for reference.

RW1A030APT2CR

Part No RW1A030APT2CR
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 3A WEMT6
Datasheet
RW1A030APT2CR Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 1mA
Max Gate Charge 22nC @ 4.5V
Max Input Capacitance 2700pF @ 6V
Maximum Gate-Source Voltage -8V
Power Dissipation (Max) 700mW (Ta)
Maximum Rds On at Id,Vgs 42 mOhm @ 3A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-WEMT
Dimension SOT-563, SOT-666
Win Source Part Number 1093109-RW1A030APT2CR
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RW1A030APT2CR CAD Model

Description

The Rohm Semiconductor RW1A030APT2CR is a P-Channel MOSFET designed by Rohm Semiconductor.

  • Packaging: reel
  • Mounting Technology: surface mount technology
  • Applications: discrete semiconductor products
  • Product Status: active
  • Supply and Demand Status: sufficient
  • Maximum Rds on @ Id, Vgs: 42 mOhm @ 3A, 4.5V
  • Maximum Gate-Source Voltage: -8V

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Pricing & Ordering

Quantity Unit Price Ext. Price
265+ $0.2208 $58.5120
640+ $0.1811 $115.9040
990+ $0.1755 $173.7450
1,365+ $0.1698 $231.7770
1,760+ $0.1642 $288.9920
2,355+ $0.1471 $346.4205
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 80,000 pieces
MOQ: 265 pcs
Order Increment : 1 pcs
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